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INS1001DE Tech Specifications

The INS1001 is designed to drive single-channel GaN FET(s) in either low-side, high-side, or secondary-side SR applications.

Product Attribute Attribute Value
Category Discrete Semiconductor Products / HV GaN HEMT
Manufacturer Innoscience
Factory Lead Time 3 Weeks
Configuration Single Driver
Features Wide 6V to 20V Operating Voltage Range
Strong 1.3-Ω Pullup and 0.5-Ω Pulldown Resistance Fast Propagation Delay with Input Deglitching
Built-In UVLO, OVP, OTP Protection
AC-DC, DC-DC Converters Boost, Flyback, and Forward Converters
Solar Inverters, Motor Control, UPS
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package DFN 3X3
Dual Inverting and Non-Inverting PWM Inputs Independent Pullup and Pulldown Outputs forAdjustable Turn-on and Turn-off Speeds
User Programmable Gate Driver Supply Voltage Integrated 5V LDO for supplying Digital Isolator
Applications Switch-Mode Power Supplies
Half-Bridge and Full-Bridge Converters Synchronous Rectification
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INS1001DE Documents

Download datasheets and manufacturer documentation for INS1001DE

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INS1001DE brand manufacturers: Innoscience, Bonchip stock, INS1001DE reference price. INS1001DE parameters, INS1001DE Datasheet PDF and pin diagram description download.You can use the INS1001DE Pluggable Connectors, DSP Datesheet PDF, find INS1001DE pin diagram and circuit diagram and usage method of function, INS1001DE electronics tutorials.You can download from the Bonchip.
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